| PART |
Description |
Maker |
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| K4J55323QF-GC15 K4J55323QF-GC14 K4J55323QF-GC16 K4 |
256Mbit GDDR3 SDRAM
|
Samsung Electronic
|
| HYB25D256160CC-5 HYB25D256160CT-5 HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| HYB25D256400BC-5 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| H55S2562JFR-60M H55S2562JFR-75M H55S2562JFR-A3M |
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
| V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
| K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
